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In electronic circuits, N-channel and P-channel devices can do the same kinds of things The main difference is the polarity An N-channel device can almost always be replaced with a P-channel JFET, and the power-supply polarity reversed, and the circuit will still work if the new device has the right specifications Just as there are different kinds of bipolar transistors, there are various types of JFETs, each suited to a particular application Some JFETs work well as weak-signal amplifiers and oscillators; others are made for power amplification Field-effect transistors have some advantages over bipolar devices Perhaps the most important is that FETs are available that generate less internal noise than bipolar transistors This makes them excellent for use in sensitive radio receivers at very high or ultra-high frequencies Field-effect transistors have high input impedances The gate controls the flow of charge carriers by means of an electric field, rather than via an electric current

the erbium can be layered with multiple passes to achieve results similar to that of a CO2 laser This though is not simply performed as the erbium does notcoagulate tissue as well as the CO2 laser and when extending deep into the papillary and reticular dermis there is signi cant bleeding that can obscure signs indicating the depth of penetration It is in the author s experience that a low level microablative erbium laser 2940 nm at 4 J/cm2 can be an effective tool for rejuvenating the neck skin in patients with skin types I IV57 The results are signi cant with an improvement in skin texture and superficial dyschromias Deeper dyspigmentation and wrinkles will not be seen as significant improvements and results are comparable to that which is achieved with a precisely and evenly placed TCA 20% to 25% peel Skin tightening improvements from this treatment are mild and not promoted Rather the texture of the skin is where the greatest achievements are recognized Step-by-step technique Prior to the treatment an antiviral is often prescribed, (valacyclovir 500 mg bid), and an antibiotic (cefadroxil 500 mg BID) ideally taken prophylactically 24 hours prior to the procedure Patients on or recently off isotretinoin (Accutane) CTD, previous radiation for head and neck cancer and open wounds are excluded from treatment The patient is placed in a reclining position Microablative erbium laser resurfacing can be painful; therefore, a topical anesthetic, commonly containing betacaine, tetracaine, and lidocaine, is applied for 20 to 30 minutes Oral analgesics and anxiolytics such as hydrocodone 5 mg and diazepam 5 10 mg are prescribed to be taken 30 minutes prior to the procedure It is important that the topical anesthetic cream is completely wiped off and the neck is bone dry If the anesthetic is not completely removed, the laser will not penetrate the skin and the laser will be ineffective Often an acetone scrub will effectively remove the anesthetic along with superficial debris and fat from the skin Protective eyewear is provided and a vacuum to remove the plume is activated The laser is initiated with a continuous one pass performed over the neck skin The entire procedure takes approximately 5 minutes Following the pass there is a slight ash char that covers the skin; this is left in place as a natural protective barrier A topical petrolatum such as Aquaphor is applied and the patient is discharged.

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The term aseptic meningitis was rst introduced to designate what was thought to be a speci c disease aseptic because bacterial

Aseptic meningitis is a common occurrence, with an annual incidence rate of 11 to 27 cases per 100,000 population (Beghi et al;

.

Either the N-channel or the P-channel JFET works because the voltage at the gate causes an electric field that interferes, more or less, with the flow of charge carriers along the channel A simplified drawing of the situation for an N-channel device is shown in Fig 23-3 For a P-channel device, just interchange polarity (minus/plus) and semiconductor types (N/P) in this discussion As the drain voltage ED increases, so does the drain current ID, up to a certain level-off value This is true as long as the gate voltage EG is constant, and is not too large negatively But as EG becomes increasingly negative (Fig 23-3A), a depletion region (solid black) begins to form in the channel Charge carriers cannot flow in this region; they must pass through a narrowed channel The more negative EG becomes, the wider the depletion region gets, as shown at B Ultimately, if the gate becomes negative enough,

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